sensitron semiconductor technical data datasheet 5024, preliminary ? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 1 SPM4012006 dual mosfet bridge, with gate driver description: a 60 volt, 12 amp, dual mosfet bridge a high density dual h-bridge capabable of driving 12a peak at 60v. this small footprint dual bridge contains low rdson power fets , fet drivers and precision current sense reistors. the device does not need heat sinking and is housed in an encapsulated sealed enclosure. the drive input signals are ttl compatable. electrical characteristics per mosfet device (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t mosfet specifications (per device) drain-to-source breakdown voltage bv dss 60 - - v continuos drain current t c = 25 o c t c = 100 o c i d - - 12 8.7 a pulsed drain current, pulse width limited to 1 msec i dm - - 97 a zero gate voltage drain current v ds = 60v, v gs =0v t i =25 o c v ds = 60 v, v gs =0v t i =125 o c i css - - 20 250 ua ua static drain-to-source on resistance, t j = 25 o c t j = 150 o c i d = 7.5a, v gs = 10v, r dson - 7.4 14.8 9.4 18.8 m ? maximum thermal resistance r jc - - 35 o c/w maximum operating junction temperature t jmax -40 - 150 o c maximum storage junction temperature t jmax -55 - 150 o c rise time tr 20 ns fall time tf 20 ns
sensitron semiconductor technical data datasheet 5024, preliminary ? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 2 SPM4012006 diodes characteristics (per device) continuous source current i s - - 2.3 a diode forward voltage, i s = 7.2a, t j = 25 o c v sd - 1.3 v diode reverse recovery time (i s =7.5a, di/dt=100 a/ s) t rr - 33 50 nsec reverse recovery charge (isd=7.5a, disd/dt=100a/us) qrr 38 57 nc gate driver supply voltage vcc 10 12 15 v supply input current ( without pwm switching ) 2 ma input drive, on current 10 ua input drive, off current i th 1 - ua boost capacitor value cboost .33 uf boost charging resistor rboost 10 ohm
sensitron semiconductor technical data datasheet 5024, preliminary ? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 3 SPM4012006 under voltage lockout vccuv+ vccuv- 8 7.4 8.9 8.2 9.8 9.0 v input-to-output turn on delay output turn on rise time input-to-output turn off delay output turn off fall time @ vcc=50v, id=4a, t c = 25 t ond t r t offd t f - - 680 100 150 50 820 170 220 90 nsec dead time 400 520 650 nsec dc bus current sensor shunt resistor value - - .01 - ohm average switching current vs. frequency for each bridge, with both bridges switching, at tc=100c, vin=50vdc. typical current vs freq. 1 10 0 20 40 60 80 100 12 0 freq. (khz) current (a)
sensitron semiconductor technical data datasheet 5024, preliminary ? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 4 SPM4012006 pin out pin # name description 1 (16) +dc_bus positive power supply bus 2 (15) drv_a logic level drive for side a 3 (14) out_b output of bridge, side b 4 (13) +15_vcc bias supply voltage for internal drivers 5 (12) isen current sense resistor output 6 (11) drv_b logic level drive for side b 7 (10) out_a output of bridge, side a 8 (9) gnd drive and power ground return () pin numbers in parenthasis are for the second h-bridge
sensitron semiconductor technical data datasheet 5024, preliminary ? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 5 SPM4012006 disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns.
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